DocumentCode
2276982
Title
TiN metal hardmask etch residue removal with mask pullback and complete mask removal for Cu dual damascene device
Author
Cui, Hua
Author_Institution
DuPont/EKC Technol., DuPont Electron. Technol., Hayward, CA, USA
fYear
2012
fDate
15-17 May 2012
Firstpage
305
Lastpage
307
Abstract
Formulations with TiN/Cu etch rate selectivity greater than 60 at 40°C for TiN pullback and 200 at 55°C for complete TiN mask removal, respectively, have been developed. The formulations are compatible with Cu, low-k and SiON materials, and prevent Cu re-oxidation.
Keywords
copper compounds; integrated circuit technology; masks; oxidation; semiconductor technology; silicon compounds; sputter etching; titanium compounds; Cu; SiON; TiN; copper dual damascene device; etch rate selectivity; mask pullback; metal hardmask etch residue removal; reoxidation prevention; temperature 40 degC; temperature 55 degC; Cleaning; Compounds; Etching; Materials; Oxidation; Tin; Cu/low-k; Etch residue removal; TiN Metal hardmask; TiN etch; single wafer cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location
Saratoga Springs, NY
ISSN
1078-8743
Print_ISBN
978-1-4673-0350-7
Type
conf
DOI
10.1109/ASMC.2012.6212916
Filename
6212916
Link To Document