Title :
Nonlinear transistor modelling based on measurements results
Author :
Quéré, R. ; Teyssier, J.P. ; Viaud, J.P. ; Obregon, J.
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
A new method for the characterization of microwave measurements has been developed. This method is based upon I(V) and S-parameters measured under pulsed condition thus avoiding the trapping and the thermal effects. The ability of the test-set-up to derive accurate nonlinear models for FET or HBT devices is demonstrated and a model verification with a high power FET has been performed demonstrating the need for accurate nonlinear modelling in the whole working domain
Keywords :
S-parameters; characteristics measurement; heterojunction bipolar transistors; microwave bipolar transistors; microwave field effect transistors; microwave measurement; microwave power transistors; power bipolar transistors; power field effect transistors; semiconductor device models; HBT; S-parameters; measurements results; microwave measurements; model verification; nonlinear transistor modelling; power FET; pulsed condition; Heterojunction bipolar transistors; Microwave FETs; Microwave devices; Microwave measurements; Microwave theory and techniques; Microwave transistors; Performance evaluation; Pulse measurements; Scattering parameters; Testing;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512511
