DocumentCode
2277010
Title
Microwave characterisation of La- and Dy-doped BiFeO3 Thin Films
Author
Chien, Hsin-I ; Petrov, Peter K. ; Palkar, Vaijayanti R. ; Tagantsev, Alexander K. ; Prashanthi, K. ; Axelsson, Anna-Karin ; Bhattacharya, S. ; Alford, Neil M.
Author_Institution
London South Bank Univ., London
fYear
2007
fDate
27-31 May 2007
Firstpage
380
Lastpage
382
Abstract
The dielectric response of La-and Dy-doped BiFeO3 thin films at microwave frequencies (up to 12 GHz) has been monitored as a function of frequency, dc electric and magnetic fields. Both the real and imaginary parts of the response have been found to be non-monotonic (oscillating) functions of measuring frequency. These oscillations are not particularly sensitive to the dc electric field, however, they are substantially dampened by the magnetic field. This phenomenon is attributed to the presence of a limited number of structural features with a resonance type response. The exact origin of these features is unknown at present.
Keywords
bismuth compounds; dielectric function; dysprosium compounds; electric field effects; ferroelectric thin films; lanthanum compounds; magnetic field effects; magnetic thin films; microwave materials; multiferroics; permittivity; Bi0.6La0.1Dy0.3FeO3; DC electric field; dielectric permittivity; dielectric resonance; magnetic field; microwave characteristics; microwave frequency; multiferroic materials; multiferroic thin film; Capacitors; Dielectric measurements; Dielectric thin films; Frequency; Magnetic field measurement; Magnetic films; Magnetic materials; Microwave technology; Pulsed laser deposition; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393271
Filename
4393271
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