DocumentCode
2277085
Title
A self-aligned double patterning technology using TiN as the sidewall spacer
Author
Chiu, Yuan-Chieh ; Yu, Shu-Sheng ; Hsu, Fang-Hao ; Lee, Hong-Ji ; Lian, Nan-Tzu ; Yang, Tahone ; Chen, Kuang-Chao ; Lu, Chih-Yuan
Author_Institution
Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan
fYear
2012
fDate
15-17 May 2012
Firstpage
332
Lastpage
335
Abstract
The TiN was conventionally used as barrier layers for both tungsten plug and AlCu metal lines. This paper reveals a novel back end of line (BEOL) self-aligned double patterning (SADP) technology, which applied TiN as a spacer material. The relative processes are introduced and discussed in detail. The new SADP approach was further applied for Cu damascene structure constructions in the advanced non-volatile memory (NVM).
Keywords
etching; random-access storage; AlCu; SADP; TiN; back end of line; barrier layers; damascene structure; metal lines; nonvolatile memory; self-aligned double patterning technology; sidewall spacer; Flash memory; Lithography; Materials; Plasmas; Silicon compounds; Tin; Self-aligned Double Patterning (SADP); TiN spacer; damascene; oxide core; trench etch;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location
Saratoga Springs, NY
ISSN
1078-8743
Print_ISBN
978-1-4673-0350-7
Type
conf
DOI
10.1109/ASMC.2012.6212922
Filename
6212922
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