Title :
Multiferroic Double-layer BiFeO3-CoFe2O4 Composite Films Prepared by Pulsed-Laser Deposition
Author :
Zhu, Yanyan ; Cheng, Jinrong ; Yu, Shengwen ; Wu, Wenbiao ; Meng, Zhongyan
Author_Institution :
Shanghai Univ., Shanghai
Abstract :
Multiferroic BiFeO3-CoFe2O4 (BFO-CFO) double-layer thin film has been deposited on platinized silicon substrate by pulsed-laser deposition. The BFO and CFO thin layers are deposited at 450 and 600 degC respectively. The diffraction peaks from spinel CoFe2O4 phases can be observed from the x-ray diffraction patterns of the double-layer BFO-CFO films. Dielectric constant and loss of the BFO-CFO films are of around 60 and 0.06 respectively, changing little with increasing the frequency. The leakege current density is about 10-6 A/cm2 under the field of 100 kV/cm. BFO-CFO thin films exhibit good ferromagnetic properties with the saturation magnetization of 120 emu/cm3 .
Keywords :
X-ray diffraction; bismuth compounds; cobalt compounds; composite materials; dielectric losses; ferroelectric thin films; ferromagnetism; leakage currents; magnetisation; permittivity; pulsed laser deposition; silicon; BiFeO3-CoFe2O4; Si; X-ray diffraction; dielectric constant; dielectric loss; ferromagnetic properties; leakege current density; multiferroic double-layer composite thin film; pulsed-laser deposition; saturation magnetization; temperature 450 C; temperature 600 C; Current density; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Frequency; Semiconductor thin films; Silicon; Sputtering; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393283
