Title :
Photo cell monitoring inspection methodology employing a complementary strategy of advanced darkfield and high sensitivity brightfield inspection tools
Author :
Syu, Jyn Hao ; Lin, Chen Chiz ; Chiang, P.Y. ; Chen, Nagus ; Yang, Henry ; Huang, Eros ; Cheng, Harvey ; Lin, Mahatma ; Chen, Kan ; Lang, Jun
Author_Institution :
Defect Manage. Div., United Microelectron. Corp., Tainan, Taiwan
Abstract :
Lithography process monitoring has always been a challenging step in foundry fabs. Broadband brightfield inspectors are used to meet the sensitivity requirement on low contrast photo-cell monitoring (PCM) process layers. However, the throughput of brightfield inspectors often requires reducing sampling rates and/or reducing wafer inspection coverage. In this paper, we introduce an innovative and highly efficient inspection methodology for 2x/4xnm PCM applications. This new defect inspection scheme utilizes a complementary inspection tool set comprised of an advanced darkfield inspection tool and a high sensitivity brightfield inspection tool. This combination provides effective process monitoring of PCM layers and significantly reduces Cost of Operation (CoO).
Keywords :
inspection; lithography; photoelectric cells; CoO; advanced darkfield inspection tool; broadband brightfield inspectors; complementary strategy; cost of operation reduction; foundry fabs; high sensitivity brightfield inspection tools; lithography process monitoring; low contrast PCM process layers; photocell monitoring inspection methodology; sampling rates reduction; sensitivity requirement; wafer inspection coverage reduction; Broadband communication; Inspection; Lithography; Monitoring; Phase change materials; Sensitivity; Throughput; PCM; Photo-cell monitoring;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-0350-7
DOI :
10.1109/ASMC.2012.6212930
