Title :
Nonlinearities in a MESFET-distributed model
Author :
Martin-Guerrero, T.M. ; Camacho-Penalosa, C.
Author_Institution :
Dept. de Ingenieria de Comunicaciones, Malaga Univ., Spain
Abstract :
A numerical optimization study of the nonlinear characteristics of a MESFET-distributed model is presented. It is shown that nonlinearities are present not only in the distributed conductance and capacitance element, but also in the resistance and inductance ones
Keywords :
Schottky gate field effect transistors; capacitance; electric admittance; electric resistance; equivalent circuits; inductance; optimisation; semiconductor device models; MESFET distributed model; distributed capacitance element; distributed conductance element; inductance; nonlinear characteristics; nonlinearities; numerical optimization; resistance; Circuit simulation; Coupling circuits; Distributed parameter circuits; Equivalent circuits; Frequency; MESFET circuits; Power transmission lines; Scattering parameters; Transmission line matrix methods; Transmission line theory;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512524
