Title :
Physical modelling of large area 4H-SiC PiN diodes
Author :
Bryant, A.T. ; Jennings, M.R. ; Parker-Allotey, N.-A. ; Mawby, P.A. ; Perez-Tomas, A. ; Brosselard, P. ; Godignon, P. ; Jorda, X. ; Millan, J. ; Palmer, P.R. ; Santi, E. ; Hudgins, J.L.
Author_Institution :
Sch. of Eng., Univ. of Warwick, Coventry, UK
Abstract :
The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200degC. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area.
Keywords :
convertors; p-i-n diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; SiC PiN diode; converter loss modelling; electro-thermal compact model; high voltage converter; silicon carbide PiN diode; temperature 25 degC to 200 degC; PiN diode; contact resistance; electro-thermal model; silicon carbide;
Conference_Titel :
Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2893-9
Electronic_ISBN :
978-1-4244-2893-9
DOI :
10.1109/ECCE.2009.5316233
