DocumentCode :
2277243
Title :
Use of 22 nm Litho SEM non-visual defect data as a process quality indicator
Author :
Boye, Carol A. ; Penny, Christopher J. ; Connors, Joe ; Boyles, Donna ; Janicki, Cezary ; Ghaskadvi, Rajesh ; Hahn, Roland
Author_Institution :
Defect & Yield Eng., IBM Corp., Albany, NY, USA
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
379
Lastpage :
382
Abstract :
This paper proposes that the non-visual defect rate for Litho layers is an indicator of the quality of the process up to and including Litho. “Non-visual” (NV) defects are those detected by optical defect inspection systems but not re-detected by the SEM review tool. The defects are occurring either on or below the surfaces of the films deposited immediately prior to lithography, or buried within the actual lithographic films. Rather than ignore the non-visual data obtained during defect inspection post lithography, the NV rate can be used as a quality indicator to trigger immediate action for root cause determination. This paper presents a new strategy for responding to Litho SEM NV defects based on a detailed study of the origin of these defects.
Keywords :
inspection; lithography; SEM review tool; defect inspection post lithography; litho SEM nonvisual defect data; litho layers; lithographic films; nonvisual data; nonvisual defect rate; optical defect inspection system; process quality indicator; size 22 nm; Inspection; Libraries; Optical films; Optical sensors; USA Councils; Visualization; Litho defectivity; Non-viusal defects; defect inspection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-0350-7
Type :
conf
DOI :
10.1109/ASMC.2012.6212931
Filename :
6212931
Link To Document :
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