• DocumentCode
    2277243
  • Title

    Use of 22 nm Litho SEM non-visual defect data as a process quality indicator

  • Author

    Boye, Carol A. ; Penny, Christopher J. ; Connors, Joe ; Boyles, Donna ; Janicki, Cezary ; Ghaskadvi, Rajesh ; Hahn, Roland

  • Author_Institution
    Defect & Yield Eng., IBM Corp., Albany, NY, USA
  • fYear
    2012
  • fDate
    15-17 May 2012
  • Firstpage
    379
  • Lastpage
    382
  • Abstract
    This paper proposes that the non-visual defect rate for Litho layers is an indicator of the quality of the process up to and including Litho. “Non-visual” (NV) defects are those detected by optical defect inspection systems but not re-detected by the SEM review tool. The defects are occurring either on or below the surfaces of the films deposited immediately prior to lithography, or buried within the actual lithographic films. Rather than ignore the non-visual data obtained during defect inspection post lithography, the NV rate can be used as a quality indicator to trigger immediate action for root cause determination. This paper presents a new strategy for responding to Litho SEM NV defects based on a detailed study of the origin of these defects.
  • Keywords
    inspection; lithography; SEM review tool; defect inspection post lithography; litho SEM nonvisual defect data; litho layers; lithographic films; nonvisual data; nonvisual defect rate; optical defect inspection system; process quality indicator; size 22 nm; Inspection; Libraries; Optical films; Optical sensors; USA Councils; Visualization; Litho defectivity; Non-viusal defects; defect inspection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4673-0350-7
  • Type

    conf

  • DOI
    10.1109/ASMC.2012.6212931
  • Filename
    6212931