Title :
High efficiency 1 watt HBT power amplifier with harmonic tuning for mobile communications
Author :
Pinatel, C. ; Vuye, S. ; Dubon-Chevalier, C. ; Wang, H.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
GaAlAs-GaAs power HBTs have been investigated for handsets in mobile cellular communication system at 1.8 GHz. Different HBTs operating classes have been compared using a simulated multiharmonic load-pull type optimization. The optimum operating class taking into account the power density and the thermal effect has been discussed. Class F amplifiers using HBTs or GaAs MESFETs have been investigated. An HBT amplifier has been designed and fabricated for DCS 1800. 1 W output power with a power-added efficiency of 50% has been measured
Keywords :
III-V semiconductors; UHF bipolar transistors; UHF integrated circuits; UHF power amplifiers; aluminium compounds; cellular radio; circuit tuning; gallium arsenide; heterojunction bipolar transistors; hybrid integrated circuits; land mobile radio; power bipolar transistors; 1 W; 1.8 GHz; 50 percent; GaAlAs-GaAs; HBT power amplifier; cellular communication; class F amplifier; handsets; harmonic tuning; mobile communications; multiharmonic load-pull type optimization; power HBTs; Distributed control; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MESFETs; Power amplifiers; Power generation; Power measurement; Power system harmonics; Telephone sets;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994., Third International Workshop on
Conference_Location :
Duisburg
Print_ISBN :
0-7803-2409-9
DOI :
10.1109/INMMC.1994.512531
