Synthesis and Dielectric properties of BiFeO3-PbTiO3 films prepared by sol-gel method

Author

Cai, Jinyu ; Yu, Shengwen ; Cheng, Jinrong ; Lu, Ya ; Meng, Zhongyan

Author_Institution

Shanghai Univ., Shanghai

fYear

2007

fDate

27-31 May 2007

Firstpage

445

Lastpage

447

Abstract

BiFeO₃ -PbTiO₃ (BFO-PT) films were synthesized by sol-gel method with the annealing temperatures to be 550degC, 600degC, and 650degC, respectively. The structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The dielectric constant and loss factor are measured. The leakage current density is also performed to check the conductivity of the films. The effect of annealing temperature of the BFO-PT films on the dielectric properties is obvious with the film annealed at 600degC presenting better dielectric behavior.

Keywords

X-ray diffraction; annealing; bismuth compounds; current density; dielectric losses; dielectric thin films; electrical conductivity; lead compounds; leakage currents; permittivity; scanning electron microscopy; sol-gel processing; BiFeO₃-PbTiO₃; SEM; X-ray diffraction; XRD; annealing; dielectric constant; dielectric loss; dielectric properties; electrical conductivity; leakage current density; scanning electron microscope; sol-gel method; temperature 550 C; temperature 600 C; temperature 650 C; thin films; Annealing; Dielectric constant; Dielectric loss measurement; Dielectric measurements; Loss measurement; Morphology; Scanning electron microscopy; Temperature; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393293

Filename

4393293