DocumentCode
2277417
Title
Thickness Uniformity of Large Area PZT Films Formed by Aerosol Deposition
Author
Iwata, A. ; Akedo, J.
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
fYear
2007
fDate
27-31 May 2007
Firstpage
448
Lastpage
449
Abstract
PZT films were deposited on 4 inch silicon wafer substrate by aerosol deposition, based on room temperature impact consolidation (RTIC). A nozzle that blowed out aerosol beam scanned the wafer. The film thickness was evaluated through the measurements with step height of masked edges. The aerosol deposited films showed relatively good uniformity of thickness of 1.4%. The surface roughness was Ra 59 nm.
Keywords
aerosols; dielectric thin films; lead compounds; silicon; surface roughness; titanium compounds; zirconium compounds; PZT; Si; aerosol deposition; room temperature impact consolidation; silicon wafer substrate; surface roughness; thin films; Acceleration; Aerosols; Ceramics; Rough surfaces; Semiconductor films; Silicon; Substrates; Surface roughness; Temperature; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393294
Filename
4393294
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