DocumentCode :
2277417
Title :
Thickness Uniformity of Large Area PZT Films Formed by Aerosol Deposition
Author :
Iwata, A. ; Akedo, J.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
448
Lastpage :
449
Abstract :
PZT films were deposited on 4 inch silicon wafer substrate by aerosol deposition, based on room temperature impact consolidation (RTIC). A nozzle that blowed out aerosol beam scanned the wafer. The film thickness was evaluated through the measurements with step height of masked edges. The aerosol deposited films showed relatively good uniformity of thickness of 1.4%. The surface roughness was Ra 59 nm.
Keywords :
aerosols; dielectric thin films; lead compounds; silicon; surface roughness; titanium compounds; zirconium compounds; PZT; Si; aerosol deposition; room temperature impact consolidation; silicon wafer substrate; surface roughness; thin films; Acceleration; Aerosols; Ceramics; Rough surfaces; Semiconductor films; Silicon; Substrates; Surface roughness; Temperature; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393294
Filename :
4393294
Link To Document :
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