DocumentCode
2277485
Title
Highly dense and crack free 50-μm-Thick PZN-PZT films by aerosol deposition method
Author
Choi, Jong-Jin ; Hahn, Byung-Dong ; Yoon, Woon-Ha ; Park, Dong-Soo ; Ryu, Jungho
Author_Institution
Korea Inst. of Machinery & Mater., Gyeong-Nam
fYear
2007
fDate
27-31 May 2007
Firstpage
460
Lastpage
463
Abstract
Lead zinc niobate -lead zirconate titanate (PZN-PZT) thick films with thickness of ~50 μm were deposited on silicon and alumina substrates using aerosol deposition method (ADM). The effects of excess lead oxide (PbO) on stress relaxation during post-annealing were studied. Excess PbO content was varied from 0 to 5 mol%. The as-deposited film had fairly dense microstructure with nano-sized grains. The as-deposited films on on sapphire were annealed at 900degC in an electrical furnace. The annealed film was detached and cracks were generated due to the high residual compressive stress and thermal stress induced by thermal expansion coefficient mismatch. However, the film deposited using powder containing 2% of excess PbO showed no cracking or detachment from the substrate after the post-annealing process. The PbO evaporation at elevated temperature during the post-annealing process seemed to have reduced the residual compressive stress. The remanent polarization and relative dielectric constant of the 50 μm-thick films annealed at 900°C were 43.1 C/cm and 1400, respectively, which were comparable with the values of a bulk specimen prepared by powder sintering process.
Keywords
aerosols; annealing; compressive strength; cracks; dielectric polarisation; dielectric relaxation; grain size; internal stresses; lead compounds; permittivity; piezoelectric thin films; stress relaxation; thermal expansion; zinc compounds; zirconium compounds; ADM; Al2O3; PbZnO3NbO3-PZT; Si; aerosol deposition method; alumina substrates; crack free thick films; dielectric constant; electrical furnace; evaporation technique; film thickness; microstructure; nanosized grains; post-annealing process; powder sintering process; remanent polarization; residual compressive stress; silicon substrates; stress relaxation; temperature 900 C; thermal expansion coefficient; thermal stress; Aerosols; Annealing; Compressive stress; Lead; Niobium compounds; Powders; Substrates; Thermal expansion; Thermal stresses; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1333-1
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393298
Filename
4393298
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