DocumentCode
2277495
Title
Electrically pumped 1.3 /spl mu/m VCSELs with InP/air-gap DBRs
Author
Chao-Kun Lin ; Bour, D. ; Jintian Zhu ; Perez, W. ; Leary, M. ; Tandon, A. ; Corzine, S. ; Tan, M.
Author_Institution
Agilent Laboratories
fYear
2002
fDate
24-24 May 2002
Firstpage
755
Lastpage
757
Abstract
We demonstrate novel electrically pumped 1.3 p VCSELs with two InP/air-gap DBRs. The devices exhibit threshold current density as low as 1.3 kA/cm2 at room temperature with CW excitation, and lase up to 80??C.
Keywords
Air gaps; Apertures; Distributed Bragg reflectors; Etching; Indium gallium arsenide; Indium phosphide; Optical pumping; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1034486
Filename
1034486
Link To Document