Title :
Aerosol deposition for ceramic thick film formation at room temperature
Author :
Tsurumi, T. ; Ma, J. ; Li, J. ; Kakemoto, H. ; Tsukiori, D. ; Sakamaki, R. ; Wada, S. ; Akedo, J.
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
Fabrication of ceramic thick films on Cu or other metal substrates is a key issue to realize the integration and the embedding of passive components in print wiring boards (PWB). The aerosol deposition (AD) process developed in AIST, Japan is the only technique to fabricate ceramics thick films at room temperature. Barium titanate films were successfully deposited on Cu substrate at room temperature for embedded capacitors. Dielectric permittivity of the film was less than 200 because particles of barium titanate were broken into small peaces in the deposition process. A heat treatment at 300degC improved the permittivity up to 240, giving rise to the capacitance density above 3 nF/mm2. Microwave dielectric films of Ba4.2Sm9.2Til8O54 were deposited on Cu substrate. A transparent film shows almost the same permittivity and TCf with bulk ceramics. Al2O3 films were deposited on Al for the application to high-power module substrates. This AI2O3/AI substrates showed better durability in a heat-cycle test than conventional AIN/Al substrates used in high-power electronic circuits of hybrid-cars.
Keywords :
aerosols; barium compounds; capacitance; ceramics; heat treatment; permittivity; printed circuits; samarium compounds; Ba4.2Sm9.2Ti18O54; aerosol deposition; barium titanate; capacitance density; ceramic thick film; dielectric permittivity; embedded capacitors; heat treatment; microwave dielectric films; print wiring boards; temperature 293 K to 298 K; temperature 300 degC; Aerosols; Artificial intelligence; Barium; Ceramics; Circuit testing; Dielectric substrates; Permittivity; Temperature; Thick films; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393299