Title :
High power external cavity semiconductor laser with wavelength tuning over C, L, and S-bands using single-angled-facet gain chip
Author :
Akhavan, F. ; Saini, S. ; Hu, Y. ; Kershaw, E. ; Wilson, S. ; Krainak, M. ; Leavitt, R. ; Heim, P.J.S. ; Dagenais, M.
Author_Institution :
Quantum Photonics Inc.
Abstract :
An InP-based single-angled-facet (SAF) gain chip comprised of a curved ridge waveguide is used to make an external cavity semiconductor laser. Wide wavelength tuning over C, L, and S-bands (155 nm) is demonstrated with an output power of more than 80 mW over the entire tuning range and a peak output power of 130 mW.
Keywords :
Coatings; Fiber lasers; Laser tuning; Optical pumping; Optical tuning; Optical waveguides; Power generation; Power lasers; Semiconductor lasers; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034488
