DocumentCode
2277587
Title
Design rules for post-CMOS through silicon vias in an industrial environment
Author
Warnat, Stephan ; Marenco, Norman ; Kahler, Dirk ; Reinert, Wolfgang
Author_Institution
Fraunhofer Inst. for Silicon Technol., Itzehoe
fYear
2006
fDate
6-8 Dec. 2006
Firstpage
35
Lastpage
39
Abstract
Through-silicon via technology is becoming inevitable to follow the increasing interconnect density required in today´s logic products. But there are advantages to other markets as well: system-in-package solutions that integrate MEMS and ASIC chips have clearly different requirements, i.e. increased robustness against mechanical stress. Rather than targeting for ultra-thin silicon, they require standard wafer thicknesses. This article lines out some challenges in the implementation of a viable post-CMOS feedthrough technology in this domain.
Keywords
CMOS integrated circuits; application specific integrated circuits; integrated circuit design; micromechanical devices; system-in-package; ASIC chips; MEMS; industrial environment; interconnect density; logic products; mechanical stress; post-CMOS feedthrough technology; system-in-package; through-silicon via technology; ultra-thin silicon; Application specific integrated circuits; CMOS process; CMOS technology; Integrated circuit interconnections; Integrated circuit technology; Microelectromechanical devices; Micromechanical devices; Silicon; Stress; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2006. EPTC '06. 8th
Conference_Location
Singapore
Print_ISBN
1-4244-0664-1
Electronic_ISBN
1-4244-0665-X
Type
conf
DOI
10.1109/EPTC.2006.342687
Filename
4147216
Link To Document