Title :
Dielectric Properties of Alkoxy-Derived BaTiO3 Films on LaNiO3/Pt/TiOx/Si(100)
Author :
Kato, Kazumi ; Suzuki, Kazuyuki ; Kayukawa, Shingo ; Tanaka, Kiyotaka ; Guo, Yiping
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Nagoya
Abstract :
BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.
Keywords :
barium compounds; buffer layers; ferroelectric thin films; ferroelectric transitions; lanthanum compounds; nucleation; platinum; silicon; titanium; BaTiO3-LaNiO3-Pt-TiOx-Si; LaNiO3-Pt-TiOx-Si; alkoxy-derived films; crystallographic characteristics; dielectric properties; ferroelectric-paraelectric transition; heterogeneous nucleation layer; homogeneous buffer layer; microstructural characteristics; temperature 105 C; Buffer layers; Crystallization; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Grain size; Microstructure; Piezoelectric films; Semiconductor films; Substrates;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393305
