Excellent Ferroelectricity of Thin Poly(Vinylidene Fluoride-Trifluoroetylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes

Author

Fujisaki, Sumiko ; Fujisaki, Yoshihisa ; Ishiwara, Hiroshi

Author_Institution

Tokyo Inst. of Technol., Yokohama

fYear

2007

fDate

27-31 May 2007

Firstpage

487

Lastpage

489

Abstract

Characteristics of MFM (metal-ferroelectrics-metal) capacitors and MFIS (metal-ferroelectrics-insulator-semiconductor) diodes with P(VDF-TrFE) copolymer films thinner than 100 nm were investigated. The films were prepared by spin cast process and were annealed at 140degC in air for crystallization. The ferroelectric properties are equivalent to those of oxide ferroelectrics even under low voltage or high frequency operation.

Keywords

MFIS structures; MIS devices; annealing; crystallisation; elemental semiconductors; ferroelectric capacitors; ferroelectric thin films; ferroelectricity; gold; polymer blends; polymer films; semiconductor diodes; silicon; silicon compounds; Au; MFIS diodes; MFM capacitors; SiO₂-Si; annealing; crystallization; ferroelectric properties; ferroelectricity; low voltage operation; metal-ferroelectrics-insulator-semiconductor; metal-ferroelectrics-metal structure; spin casting; temperature 140 degC; thin poly(vinylidene fluoride trifluoroetylene) copolymer films; Capacitors; Dielectrics and electrical insulation; Diodes; Ferroelectric films; Ferroelectric materials; Flash memory; Low voltage; Magnetic field induced strain; Magnetic force microscopy; Polarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393307

Filename

4393307