DocumentCode
2277638
Title
Development of thin film range resistors for high-voltage AC-DC transfer standards
Author
Fujiki, H. ; Chiyoda, T.
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
fYear
2008
fDate
8-13 June 2008
Firstpage
228
Lastpage
229
Abstract
New thin-film range resistors have been developed at the National Metrology Institute of Japan (NMIJ) to reduce the voltage dependence of AC-DC transfer differences that have appeared in the processes of the step-up procedures over 300 V. The occurrence of voltage dependence is partly due to rising ambience temperature that may cause changes in the resistance of the resistor and the temperature dependence of the dielectric losses in the coating of the resistor. In order to avoid these problems, our new thin film heaters were directly sputtered on an AlN substrate and covered with SiO2 film. The material of the heater is a NiCrFeAl alloy, which has a low temperature coefficient of the resistor around room temperature. This paper describes the reduction of the voltage dependence of AC-DC transfer differences over 300 V by improving the design of the range resistors for high-voltage thermal voltage converters (TVCs).
Keywords
aluminium alloys; chromium alloys; convertors; heating elements; iron alloys; nickel alloys; silicon compounds; sputtered coatings; thin film resistors; transfer standards; voltage measurement; AlN; NMIJ; National Metrology Institute of Japan; NiCrFeAl; SiO2; dielectric losses; high-voltage AC-DC transfer standards; high-voltage thermal voltage converter; resistor coating; sputtered film; temperature coefficient; temperature dependence; thin film heater; thin film range resistor; Dielectric losses; Dielectric substrates; Dielectric thin films; Metrology; Resistors; Standards development; Temperature dependence; Temperature distribution; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location
Broomfield, CO
Print_ISBN
978-1-4244-2399-6
Electronic_ISBN
978-1-4244-2400-9
Type
conf
DOI
10.1109/CPEM.2008.4574736
Filename
4574736
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