Title :
A V-band frequency tripler with output power enhancement in 90nm CMOS
Author :
Huang, Fan-Hsiu ; Hsin, Yue-Ming
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
A frequency tripler designed for V-band signal generation and millimeter-wave applications has been implemented by using CMOS 90 nm technology. In order to improve the output power level with high conversion efficiency, we use a cascode circuit topology to design a frequency tripler. Based on the small-signal analysis and the large-signal harmonic simulation, the optimized characteristics such as conversion loss, output bandwidth, and the output power response can be achieved under the proper biases in this circuit. The tripler exhibits a conversion loss of 9 dB at 54 GHz for an input power of 4 dBm. The dc power consumption of the circuit is about 5.4 mW with a 1.8 V dc supply. The measured output 3-dB bandwidth is approximated to 10.5 GHz, ranging from 49.5 GHz to 60 GHz. The fundamental- and second-order suppressions both are better than 31 dBc. A high saturation output power can be achieved to -1.4 dBm when injecting a signal power of 10 dBm.
Keywords :
CMOS integrated circuits; frequency multipliers; integrated circuit design; microwave integrated circuits; millimetre wave circuits; network topology; CMOS technology; V-band frequency tripler; V-band signal generation; bandwidth 49.5 GHz to 60 GHz; cascode circuit topology; conversion efficiency; conversion loss; frequency 54 GHz; frequency tripler design; large-signal harmonic simulation; loss 9 dB; millimeter-wave application; output power enhancement; size 90 nm; small-signal analysis; voltage 1.8 V; CMOS integrated circuits; Frequency conversion; Frequency measurement; Harmonic analysis; Power generation; Power system harmonics; Transmission line measurements; CMOS; cascode circuit topology; frequency tripler; millimeter-wave signal generation;
Conference_Titel :
High Speed Intelligent Communication Forum (HSIC), 2012 4th International
Conference_Location :
Nanjing, Jiangsu
Print_ISBN :
978-1-4673-0678-2
Electronic_ISBN :
978-1-4673-0676-8
DOI :
10.1109/HSIC.2012.6212957