Title :
Terahertz semiconductor-heterostructure lasers
Author :
Kohler, R. ; Tredicucci, A. ; Beltram, F. ; Beere, H.E. ; Linfield, E.H. ; Davies, A.G. ; Ritchie, D.A. ; Iotti, R.C. ; Rossi, F.
Author_Institution :
NEST-INFM & Scuola Normale Superiore, Pisa, Italy
Abstract :
Injection lasers based on interminiband transitions in GaAs/AlGaAs heterostructures are operated in the THz range. Single-mode emission is achieved at 4.4THz, with output powers of 2.5mW and thresholds of few hundred A/cm/sup 2/ up to 50K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; laser theory; laser transitions; quantum cascade lasers; semiconductor device models; submillimetre wave lasers; 2.5 mW; 4.4 THz; 50 K; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; THz range; injection lasers; interminiband transitions; laser thresholds; output powers; single-mode emission; terahertz semiconductor-heterostructure lasers; Biomedical optical imaging; Laser modes; Laser transitions; Optical scattering; Optical sensors; Power generation; Power lasers; Quantum cascade lasers; Semiconductor lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034500
