DocumentCode
2277752
Title
2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621)
fYear
2002
fDate
4-6 Sept. 2002
Abstract
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.
Keywords
electrostatic discharge; micromechanical devices; semiconductor device models; semiconductor heterojunctions; semiconductor process modelling; technology CAD (electronics); AC analysis; ESD; MEMS; TCAD applications; advanced circuit modeling; algorithms; atomistic modeling; device modeling; device performance; fluctuation simulation; heterostructure simulation; numerics; physical modeling; process modeling; quantum transport modeling; semiconductor device simulation; semiconductor process simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Conference_Location
Kobe, Japan
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034502
Filename
1034502
Link To Document