Narrow-band bandpass filter with enhanced Q and selectivity based on coupled negative resistance

Author

Wang, Ling ; You, Changjiang ; Ge, Chuan ; Zhu, Xiaowei

Author_Institution

State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China

fYear

2012

fDate

10-11 May 2012

Firstpage

1

Lastpage

3

Abstract

This paper proposes a novel narrow-band bandpass filter with relative 3dB bandwidth of less than 1% and enhanced selectivity by utilizing negative resistance. The HEMT device is employed to realize the negative resistance with a common-source and drain inductance and capacitance feedback structure. Q-enhancement is accomplished by the negative resistance coupled to other resonators. The measured results show that the fabricated active filter has a relative 3dB bandwidth of 0.9% and insertion loss of 0.37dB. Moreover, the skirt of the filter is sharpened and the selectivity is enhanced by using the negative resistance.

Keywords

HEMT circuits; active filters; band-pass filters; capacitance; resonator filters; HEMT device; Q-enhancement; active filter; capacitance feedback structure; common-source; coupled negative resistance; drain inductance; loss 0.37 dB; narrow-band bandpass filter; resonator; Band pass filters; Bandwidth; Inductors; Microstrip filters; Resistance; Resonator filters; HEMT; Narrow-band filter; active filter; bandpass filter; negative resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Intelligent Communication Forum (HSIC), 2012 4th International

Conference_Location

Nanjing, Jiangsu

Print_ISBN

978-1-4673-0678-2

Electronic_ISBN

978-1-4673-0676-8

Type

conf

DOI

10.1109/HSIC.2012.6212964

Filename

6212964