Title :
Quantification of benefits and drawbacks in power conversion based on complementary MOS structures
Author :
Tran, Manh Hung ; Crebier, Jean-Christophe ; Schaeffer, Christian
Author_Institution :
Grenoble Electr. Eng. Lab. (G2ELab), Grenoble Inst. of Technol., St. Martin d´´Heres, France
Abstract :
The paper deals with the advantages and drawbacks using complementary MOS structures in power converter. Approaching from the common mode conducted EMI perspective, the paper shows, at first, how beneficial the complementary structures are. Experimental and simulation results underline the specific behavior of such structures. Then, other advantages and also drawbacks are discussed and analyzed. This is made regarding the converter efficiency and the gate drivers operation for each converter leg. These issues are examined using simulations and experiments.
Keywords :
CMOS integrated circuits; power conversion; power convertors; power integrated circuits; complementary MOS structures; complementary metal-oxide-semiconductor integrated circuits; converter leg; gate drivers operation; power conversion; power converter efficiency; Complementary MOS; Gates drivers; MOSFET; conducted EMI; converter efficiency;
Conference_Titel :
Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2893-9
Electronic_ISBN :
978-1-4244-2893-9
DOI :
10.1109/ECCE.2009.5316261
