Quantification of benefits and drawbacks in power conversion based on complementary MOS structures

Author

Tran, Manh Hung ; Crebier, Jean-Christophe ; Schaeffer, Christian

Author_Institution

Grenoble Electr. Eng. Lab. (G2ELab), Grenoble Inst. of Technol., St. Martin d´´Heres, France

fYear

2009

fDate

20-24 Sept. 2009

Firstpage

3423

Lastpage

3430

Abstract

The paper deals with the advantages and drawbacks using complementary MOS structures in power converter. Approaching from the common mode conducted EMI perspective, the paper shows, at first, how beneficial the complementary structures are. Experimental and simulation results underline the specific behavior of such structures. Then, other advantages and also drawbacks are discussed and analyzed. This is made regarding the converter efficiency and the gate drivers operation for each converter leg. These issues are examined using simulations and experiments.

Keywords

CMOS integrated circuits; power conversion; power convertors; power integrated circuits; complementary MOS structures; complementary metal-oxide-semiconductor integrated circuits; converter leg; gate drivers operation; power conversion; power converter efficiency; Complementary MOS; Gates drivers; MOSFET; conducted EMI; converter efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2893-9

Electronic_ISBN

978-1-4244-2893-9

Type

conf

DOI

10.1109/ECCE.2009.5316261

Filename

5316261