Investigation of the electron mobility in strained Si1-xGex at high Ge composition

Monte Carlo simulation of the low field electron mobility of strained Si and SiGe active layers on SiGe substrate is considered. The Ge mole fractions of both the active layer and the substrate are varied in a wide range. The linear deformation potential theory is used to calculate the shifts of the conduction band minima due to the uniaxial strain along [001]. The energy shifts and the effective masses are assumed to be functions of the Ge mole fraction. Finally, the ionized impurity scattering rate is generalized to include strain effects for doped materials.