Title :
Investigation of the electron mobility in strained Si1-xGex at high Ge composition
Author :
Smirnov, S. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
Monte Carlo simulation of the low field electron mobility of strained Si and SiGe active layers on SiGe substrate is considered. The Ge mole fractions of both the active layer and the substrate are varied in a wide range. The linear deformation potential theory is used to calculate the shifts of the conduction band minima due to the uniaxial strain along [001]. The energy shifts and the effective masses are assumed to be functions of the Ge mole fraction. Finally, the ionized impurity scattering rate is generalized to include strain effects for doped materials.
Keywords :
Ge-Si alloys; Monte Carlo methods; carrier mobility; conduction bands; effective mass; impurity scattering; piezoresistance; semiconductor materials; semiconductor thin films; Ge mole fractions; Monte Carlo simulation; Si-Ge; SiGe; SiGe substrate; active layers; conduction band minima; doped materials; effective masses; electron mobility; energy shifts; high Ge composition; ionized impurity scattering rate; linear deformation potential theory; low field electron mobility; strained Si1-xGex; uniaxial strain; Capacitive sensors; Conducting materials; Effective mass; Electron mobility; Germanium alloys; Germanium silicon alloys; Monte Carlo methods; Scattering; Silicon germanium; Tensile stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034509
