Vertical SiC JFET model with unified description of linear and saturation operating regions

A novel SiC junction field effect transistor (JFET) model is proposed that uses a unified description of linear and saturated conduction modes. Advantages of the proposed model are improved robustness and convergence, inclusion of field-dependent mobility effects, and more physical description of the current saturation phenomenon. The model is validated against a normally-off JFET sample over a wide temperature range. Finite element simulation are used to demonstrate the physics-based nature of the proposed model.