Title :
VBIC model applicability and extraction procedure for InGap/GaAs HBT
Author :
Cherepko, S.V. ; Hwang, J. C M
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
In this paper the applicability of VBIC-95 for InGaP/GaAs HBT modelling is examined. An extraction procedure is presented for parameters responsible for saturation currents, thermal resistance, internal base resistance and forward transit time. The resulting VBIC model was verified against large-signal DC and AC measurements.
Keywords :
III-V semiconductors; UHF bipolar transistors; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; thermal resistance; HBT modelling; InGaP-GaAs; InGaP/GaAs HBTs; VBIC model; VBIC-95; extraction procedure; forward transit time; internal base resistance; saturation currents; thermal resistance; Bipolar transistors; Doping; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Kirk field collapse effect; SPICE; Semiconductor process modeling; Thermal resistance; Topology;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985472
