Title :
An extended RF non-linear model for power prediction of AlGaAs/InGaAs pHEMT´s
Author :
Lin, Chen-Kuo ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
A modified Curtice non-linear model for pHEMTs, capable of modeling the current-voltage characteristics, drain-source resistances, gate-source and gate-drain capacitances, is developed. Parameter extraction is based on dual delta-doped pseudomorphic HEMTs on GaAs substrates. Measured and modeled dc I-V, S-parameters, and power performance are compared and demonstrate a great improvement from conventional non-linear models.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; capacitance; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; AlGaAs-InGaAs; AlGaAs/InGaAs pHEMT; GaAs; GaAs substrates; S-parameters; current-voltage characteristics; delta-doped pseudomorphic HEMTs; drain-source resistance; extended RF nonlinear model; gate-drain capacitance; gate-source capacitance; modified Curtice nonlinear model; parameter extraction; power performance; Capacitance; Current-voltage characteristics; Electrical resistance measurement; Gallium arsenide; Indium gallium arsenide; PHEMTs; Parameter extraction; Power measurement; Predictive models; Radio frequency;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985473
