Title :
On the large-signal CMOS modeling and parameter extraction for RF applications
Author :
Je, Minkyu ; Kwon, Ickjin ; Han, Jeonghu ; Shin, Hyungcheol ; Lee, Kwyro
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, South Korea
Abstract :
A small-signal equivalent circuit of an RF MOSFET not only fully compatible with 4 terminal large-signal quasi-static I-V and Q-V models but suitable for 3 terminal two-port s-parameter measurement, is proposed along with very simple and accurate parameter extraction method. This model includes the intrinsic and extrinsic elements important for AC simulation at RF. The validity and accuracy of our approach is verified from 0.18 μm RF NMOS results.
Keywords :
CMOS integrated circuits; integrated circuit modelling; microwave integrated circuits; 0.18 μm RF NMOS; 0.18 micron; 3 terminal two-port s-parameter measurement; 4 terminal large-signal quasi-static models; RF MOSFET; RF applications; accurate parameter extraction method; large-signal CMOS modeling; parameter extraction; small-signal equivalent circuit; Capacitance; Circuit simulation; Data mining; Equivalent circuits; Integrated circuit modeling; MOSFET circuits; Parameter extraction; Radio frequency; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034518
