Title :
Multiscale simulation of diffusion, deactivation, and segregation of dopants - ab-initio to continuum
Author_Institution :
Dept. of Mater. Sci. & Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
In this paper, concepts and applications of ab-initio based multiscale process simulation work are discussed, including results for diffusion, deactivation, and interface segregation of boron in silicon as well as a corresponding continuum model.
Keywords :
ab initio calculations; boron; diffusion; elemental semiconductors; semiconductor doping; semiconductor process modelling; silicon; surface segregation; MOSFET; Si:B; ab-initio based multiscale process simulations; dopant deactivation; dopant diffusion; dopant segregation; interface segregation; multiscale simulation; Boron; Educational institutions; Electronic mail; FETs; Heart; Lattices; MOSFET circuits; Materials science and technology; Metals industry; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034522
