• DocumentCode
    2278124
  • Title

    A 20GS/s low-power BiCMOS comparator using an active inductor load

  • Author

    Kuai Yin ; Qiao Meng ; Kai Tang ; Yi Zhang

  • Author_Institution
    Inst. of RF - & OE-ICs, Southeast Univ., Nanjing, China
  • fYear
    2012
  • fDate
    10-11 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A 20GS/s BiCMOS latched comparator for highspeed, low-power Analog-to-Digital Converter (ADC) is proposed. The resister load of conventional current-steering comparator is replaced by an active inductor load made by a MOS transistor and a resister. This solution extends the bandwidth of the circuit without excessive power dissipation. Implemented in 0.35μm SiGe BiCMOS technology, this comparator only occupies a die area of 97×67 μm2 with a power dissipation of 31 mW from a 3.3-V power supply. Operating with an input frequency of 2 GHz, the circuit can oversample up to 20 GS/s with 4 bits of resolution; while operating at Nyquist, the comparator can sample up to 20 GS/s with 3 bits resolution. This design achieves a considerable trade-off between power, speed and resolution.
  • Keywords
    analogue-digital conversion; comparators (circuits); inductors; integrated circuit design; low-power electronics; silicon compounds; MOS transistor; SiGe; active inductor load; current-steering comparator; design; frequency 2 GHz; low-power BiCMOS latched comparator; low-power analog-to-digital converter; resister load; size 0.35 mum; voltage 3.3 V; Active inductors; BiCMOS integrated circuits; Heterojunction bipolar transistors; Latches; Silicon germanium; Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Intelligent Communication Forum (HSIC), 2012 4th International
  • Conference_Location
    Nanjing, Jiangsu
  • Print_ISBN
    978-1-4673-0678-2
  • Electronic_ISBN
    978-1-4673-0676-8
  • Type

    conf

  • DOI
    10.1109/HSIC.2012.6212984
  • Filename
    6212984