Title :
Low noise silicon CMOS single-electron transistors and electron pumps
Author :
Pierre, M. ; Jehl, X. ; Sanquer, M. ; Vinet, M. ; Previtali, B. ; Molas, G. ; Deleonibus, S.
Author_Institution :
DRFMC, CEA-Grenoble, Grenoble
Abstract :
We design and fabricate single-electron transistors and electron pumps within an industrial CMOS platform. Based on silicon nanowire transistors, these devices allow very simple and stable single-electron control thanks to doping modulation along the wire.
Keywords :
CMOS integrated circuits; nanowires; single electron transistors; electron pumps; industrial CMOS platform; low noise silicon CMOS single-electron transistors; silicon nanowire transistors; Circuits; Doping; Lithography; Metrology; Quantum dots; Silicon; Single electron transistors; Temperature; Voltage; Wire;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
DOI :
10.1109/CPEM.2008.4574763
