• DocumentCode
    2278166
  • Title

    Low noise silicon CMOS single-electron transistors and electron pumps

  • Author

    Pierre, M. ; Jehl, X. ; Sanquer, M. ; Vinet, M. ; Previtali, B. ; Molas, G. ; Deleonibus, S.

  • Author_Institution
    DRFMC, CEA-Grenoble, Grenoble
  • fYear
    2008
  • fDate
    8-13 June 2008
  • Firstpage
    282
  • Lastpage
    283
  • Abstract
    We design and fabricate single-electron transistors and electron pumps within an industrial CMOS platform. Based on silicon nanowire transistors, these devices allow very simple and stable single-electron control thanks to doping modulation along the wire.
  • Keywords
    CMOS integrated circuits; nanowires; single electron transistors; electron pumps; industrial CMOS platform; low noise silicon CMOS single-electron transistors; silicon nanowire transistors; Circuits; Doping; Lithography; Metrology; Quantum dots; Silicon; Single electron transistors; Temperature; Voltage; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
  • Conference_Location
    Broomfield, CO
  • Print_ISBN
    978-1-4244-2399-6
  • Electronic_ISBN
    978-1-4244-2400-9
  • Type

    conf

  • DOI
    10.1109/CPEM.2008.4574763
  • Filename
    4574763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2278166