DocumentCode
2278189
Title
Enhanced advancing front Delaunay meshing in TCAD
Author
Fleischmann, P. ; Selberherr, S.
Author_Institution
Inst. fur Microelectron., Technische Univ. Wien, Austria
fYear
2002
fDate
2002
Firstpage
99
Lastpage
102
Abstract
New developments of the advancing front Delaunay mesher deLink are presented. The motivation for the advancing front Delaunay method and its differences compared to the in three dimensions commonly used incremental Delaunay algorithm are shortly discussed. A new element quality assessment with regard to anisotropy and so called "flat tets" or slivers is proposed.
Keywords
mesh generation; semiconductor device models; semiconductor process modelling; technology CAD (electronics); TCAD; advancing front Delaunay mesher deLink; anisotropy; element quality assessment; enhanced advancing front Delaunay meshing; flat tets; incremental Delaunay algorithm; slivers; Anisotropic magnetoresistance; Doping; Finite element methods; Gold; Kernel; Microelectronics; Quality assessment; Robustness; Shape; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034526
Filename
1034526
Link To Document