Title :
Enhanced advancing front Delaunay meshing in TCAD
Author :
Fleischmann, P. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
New developments of the advancing front Delaunay mesher deLink are presented. The motivation for the advancing front Delaunay method and its differences compared to the in three dimensions commonly used incremental Delaunay algorithm are shortly discussed. A new element quality assessment with regard to anisotropy and so called "flat tets" or slivers is proposed.
Keywords :
mesh generation; semiconductor device models; semiconductor process modelling; technology CAD (electronics); TCAD; advancing front Delaunay mesher deLink; anisotropy; element quality assessment; enhanced advancing front Delaunay meshing; flat tets; incremental Delaunay algorithm; slivers; Anisotropic magnetoresistance; Doping; Finite element methods; Gold; Kernel; Microelectronics; Quality assessment; Robustness; Shape; Testing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034526
