• DocumentCode
    2278302
  • Title

    Atomistic simulation of RTA annealing for shallow junction formation characterizing both BED and TED

  • Author

    Yu, Min ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Oka, Hideki

  • Author_Institution
    Peking University
  • fYear
    2002
  • fDate
    4-6 Sept. 2002
  • Firstpage
    123
  • Lastpage
    126
  • Keywords
    Boron; Computational modeling; Kinetic theory; Laboratories; Lattices; Monte Carlo methods; Semiconductor device modeling; Silicon; Simulated annealing; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
  • Conference_Location
    Kobe, Japan
  • Print_ISBN
    4-89114-027-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2002.1034532
  • Filename
    1034532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2278302