Title :
Atomistic simulation of RTA annealing for shallow junction formation characterizing both BED and TED
Author :
Yu, Min ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Oka, Hideki
Author_Institution :
Peking University
Keywords :
Boron; Computational modeling; Kinetic theory; Laboratories; Lattices; Monte Carlo methods; Semiconductor device modeling; Silicon; Simulated annealing; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034532
