DocumentCode
2278320
Title
Three-dimensional triangle-based simulation of etching processes
Author
Lenhart, O. ; Bär, E.
Author_Institution
Device Technol. Div., Fraunhofer Inst. of Integrated Circuits, Erlangen, Germany
fYear
2002
fDate
2002
Firstpage
127
Lastpage
130
Abstract
A software module for the three-dimensional simulation of etching processes has been developed. It works on multilayer structures given as triangulated surface meshes. The mesh is moved no dewise according to rates which in this work have been determined from isotropic and anisotropic components. An important feature of the algorithm is the automatic detection of triple lines along mask edges and the refinement of triangles at these triple lines. This allows for the simulation of underetching. The capabilities of the algorithm are demonstrated by examples such as the simulation of glass etching for the fabrication of a phase shift mask for optical lithography and the etching of an STI trench structure.
Keywords
etching; semiconductor process modelling; STI trench structure; anisotropic components; etching processes; isotropic components; multilayer structures; optical lithography; software module; three-dimensional triangle-based simulation; triangulated surface meshes; underetching; Anisotropic magnetoresistance; Circuit simulation; Etching; Glass; Integrated circuit technology; Nonhomogeneous media; Optical device fabrication; Silicon compounds; Strips; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034533
Filename
1034533
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