• DocumentCode
    2278320
  • Title

    Three-dimensional triangle-based simulation of etching processes

  • Author

    Lenhart, O. ; Bär, E.

  • Author_Institution
    Device Technol. Div., Fraunhofer Inst. of Integrated Circuits, Erlangen, Germany
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    A software module for the three-dimensional simulation of etching processes has been developed. It works on multilayer structures given as triangulated surface meshes. The mesh is moved no dewise according to rates which in this work have been determined from isotropic and anisotropic components. An important feature of the algorithm is the automatic detection of triple lines along mask edges and the refinement of triangles at these triple lines. This allows for the simulation of underetching. The capabilities of the algorithm are demonstrated by examples such as the simulation of glass etching for the fabrication of a phase shift mask for optical lithography and the etching of an STI trench structure.
  • Keywords
    etching; semiconductor process modelling; STI trench structure; anisotropic components; etching processes; isotropic components; multilayer structures; optical lithography; software module; three-dimensional triangle-based simulation; triangulated surface meshes; underetching; Anisotropic magnetoresistance; Circuit simulation; Etching; Glass; Integrated circuit technology; Nonhomogeneous media; Optical device fabrication; Silicon compounds; Strips; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
  • Print_ISBN
    4-89114-027-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2002.1034533
  • Filename
    1034533