DocumentCode :
2278320
Title :
Three-dimensional triangle-based simulation of etching processes
Author :
Lenhart, O. ; Bär, E.
Author_Institution :
Device Technol. Div., Fraunhofer Inst. of Integrated Circuits, Erlangen, Germany
fYear :
2002
fDate :
2002
Firstpage :
127
Lastpage :
130
Abstract :
A software module for the three-dimensional simulation of etching processes has been developed. It works on multilayer structures given as triangulated surface meshes. The mesh is moved no dewise according to rates which in this work have been determined from isotropic and anisotropic components. An important feature of the algorithm is the automatic detection of triple lines along mask edges and the refinement of triangles at these triple lines. This allows for the simulation of underetching. The capabilities of the algorithm are demonstrated by examples such as the simulation of glass etching for the fabrication of a phase shift mask for optical lithography and the etching of an STI trench structure.
Keywords :
etching; semiconductor process modelling; STI trench structure; anisotropic components; etching processes; isotropic components; multilayer structures; optical lithography; software module; three-dimensional triangle-based simulation; triangulated surface meshes; underetching; Anisotropic magnetoresistance; Circuit simulation; Etching; Glass; Integrated circuit technology; Nonhomogeneous media; Optical device fabrication; Silicon compounds; Strips; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
Type :
conf
DOI :
10.1109/SISPAD.2002.1034533
Filename :
1034533
Link To Document :
بازگشت