DocumentCode :
2278380
Title :
The body driven low phase noise injection-locked V-band push-push complementary-Colpitts oscillator
Author :
Chu, Chia-Yi ; Ke, Bo-Yu ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2012
fDate :
10-11 May 2012
Firstpage :
1
Lastpage :
2
Abstract :
An injection-locked push-push oscillator is developed for millimeter-wave signal source. A V-band push-push CMOS voltage controlled oscillator (VCO) is proposed in this study. A new core complementary Colpitts structure was adopted in a 90 nm CMOS process of FET induced capacitance of LC tank. The measured phase noise at 1 MHz offset is at 59 GHz. The power consumption of the VCO core is only 28.8 mW. The total chip size is 0.719 × 0.633 mm2.
Keywords :
CMOS analogue integrated circuits; field effect transistors; millimetre wave oscillators; phase locked oscillators; phase noise; CMOS process; FET induced capacitance; LC tank; V-band push-push CMOS voltage controlled oscillator; VCO; frequency 59 GHz; phase noise injection-locked V-band push-push complementary-Colpitts oscillator; power 28.8 mW; power consumption; size 90 nm; CMOS integrated circuits; Injection-locked oscillators; Phase noise; Power generation; Voltage-controlled oscillators; Wireless communication; CMOS; Colpitts; Injection-locked; V-band; push-push; voltage controlled oscillator (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Intelligent Communication Forum (HSIC), 2012 4th International
Conference_Location :
Nanjing, Jiangsu
Print_ISBN :
978-1-4673-0678-2
Electronic_ISBN :
978-1-4673-0676-8
Type :
conf
DOI :
10.1109/HSIC.2012.6213001
Filename :
6213001
Link To Document :
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