Self-consistent single-particle simulation

Self-consistent single-particle Monte Carlo device simulations are presented. Self-consistency is achieved by an iterative coupling-scheme of single-particle frozen-field Monte Carlo simulations with solutions of the nonlinear Poisson equation. As an example a realistic 0.1 μm n-MOSFET obtained from process simulation with maximum doping levels of about 2.5 × 10²⁰ cm^-3 is simulated. It is found that the resulting drain current is independent of the length of the time interval per iteration (provided that it is not too small) and independent of the density in the regions not visited by the particles taken either from a drift-diffusion or a hydrodynamic simulation. Therefore the self-consistent single-particle Monte Carlo simulation is an accurate and robust simulation tool for the quasi-ballistic regime in sub 0.1 μm MOSFETs.