Speed-up crosstalk simulation on coupled microstrip lines using the FDTD method by scaling of cross-section size

The near-end and far-end crosstalk of parallel-coupled microstrip lines are functions of W/H and S/H, where W, H and S are the line width, substrate thickness and the inner edge-to-edge separation distance of the coupled lines respectively. In view of this, the cross-section size of the parallel-coupled microstrip lines can be scaled up in using the FDTD method to simulate crosstalk on the "magnified" structure. This allows a larger discretization cell, therefore a larger time step and hence a shorter simulation times. This method yields similar results as the original structure because W/H and S/H of the coupled lines are maintained at the same ratios.