Title :
A new non-pair diffusion based dopant pile-up model for process designers and its prediction accuracy
Author :
Hayashi, Hirokazu ; Miura, Noriyuki ; Komatsubara, Hirotaka ; Mochizuki, Marie ; Fukuda, Koichi
Author_Institution :
Syst. LSI Res. Div., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
This paper describes an effective model which reproduces the dopant pile-up in the Si/SiO2 interface using a conventional process simulator that solves one equation for each impurity. The proposed model is based on the physics where the key factor of RSCE is the dopant pile-up in the Si/SiO2 interface. The capability of the model is investigated though the comparison to measurements in actual fabricated nMOSFETs for different process technologies.
Keywords :
MOSFET; doping profiles; elemental semiconductors; semiconductor device models; semiconductor process modelling; silicon; silicon compounds; surface diffusion; Si-SiO2; Si/SiO2 interface; dopant pile-up model; nMOSFETs; non-pair diffusion; prediction accuracy; process designers; Accuracy; Design optimization; Equations; Impurities; Large scale integration; MOSFETs; Physics; Predictive models; Process design; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034553
