DocumentCode
2278730
Title
The process modeling hierarchy: connecting atomistic calculations to nanoscale behavior
Author
Dunham, Scott T.
Author_Institution
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
fYear
2002
fDate
2002
Firstpage
213
Lastpage
216
Abstract
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation.
Keywords
Monte Carlo methods; VLSI; density functional theory; integrated circuit modelling; semiconductor process modelling; DFT calculations; VLSI process simulation; atomistic calculations; kinetic lattice Monte-Carlo approach; nanoscale behavior; process modeling hierarchy; Bismuth; Boron; Circuit simulation; Fabrication; Ion implantation; Joining processes; Kinetic theory; Monte Carlo methods; Nanoscale devices; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034555
Filename
1034555
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