Title :
Modeling of the diffusion of implanted boron in strained Si/Si1-xGex
Author :
Zhu, Huilong ; Lee, Kam-Leung ; Dokumaci, O. ; Ronsheim, P. ; Cardone, F. ; Hegde, S. ; Mantz, U. ; Saunders, P.
Author_Institution :
Microelectron. Div., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
Abstract :
The diffusion of implanted boron in strained Si/Si1-xGex is investigated. A continuum segregation model (CSM) is presented to describe the phenomenon of B pile-up into the germanium profile. An analytic formula is obtained for Ge pre-amorphization and a modified pre-amorphization model is used in TSUPREM4 in order to accurately model our measurement data. Our simulations of boron diffusion are in reasonable agreement with our SIMS data. Comparison of the CSM with the model of immobile boron-germanium clusters is also discussed.
Keywords :
Ge-Si alloys; amorphisation; boron; diffusion; elemental semiconductors; internal stresses; segregation; semiconductor junctions; semiconductor materials; silicon; B pile-up; CSM; Ge pre-amorphization; SIMS; Si-SiGe:B; TSUPREM4; continuum segregation model; diffusion; immobile boron-germanium clusters; implanted boron; pre-amorphization model; strained Si/Si1-xGex; Annealing; Boron; Germanium silicon alloys; Heterojunction bipolar transistors; Potential energy; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Stress; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034557
