DocumentCode
2278792
Title
Technology modeling for emerging SOI devices
Author
Ieong, Meikei ; Oldiges, Phil
Author_Institution
Microelectron. Div., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
fYear
2002
fDate
2002
Firstpage
225
Lastpage
230
Abstract
New physical models, algorithms, and parameters are needed to accurately model emerging silicon-on-insulator (SOI) devices. We discuss key modeling tools and methodologies used to support research, development, and manufacturing of emerging SOI device technology. Although commercial TCAD tools are available, new physical models, parameters, and algorithms are needed to study these novel device structures.
Keywords
MOSFET; silicon-on-insulator; technology CAD (electronics); CMOS scaling; SOI MOSFET; SOI devices; Schottky source/drain MOSFETS; TCAD; double-gate MOSFETS; emerging SOI devices; technology modeling; ultra-thin body MOSFETS; CMOS technology; Calibration; Computational modeling; Diodes; Implants; MOSFET circuits; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN
4-89114-027-5
Type
conf
DOI
10.1109/SISPAD.2002.1034558
Filename
1034558
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