Title :
Technology modeling for emerging SOI devices
Author :
Ieong, Meikei ; Oldiges, Phil
Author_Institution :
Microelectron. Div., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
Abstract :
New physical models, algorithms, and parameters are needed to accurately model emerging silicon-on-insulator (SOI) devices. We discuss key modeling tools and methodologies used to support research, development, and manufacturing of emerging SOI device technology. Although commercial TCAD tools are available, new physical models, parameters, and algorithms are needed to study these novel device structures.
Keywords :
MOSFET; silicon-on-insulator; technology CAD (electronics); CMOS scaling; SOI MOSFET; SOI devices; Schottky source/drain MOSFETS; TCAD; double-gate MOSFETS; emerging SOI devices; technology modeling; ultra-thin body MOSFETS; CMOS technology; Calibration; Computational modeling; Diodes; Implants; MOSFET circuits; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034558
