Title :
Analysis of injection current with electron temperature for high-K gate stacks
Author :
Ohkura, Y. ; Takashino, H. ; Wakahara, S. ; Nishi, K.
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
Though, high dielectric constant material is a possible near future candidate to suppress gate current densities of MOSFETs, the barrier height generally decreases with increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.
Keywords :
MOSFET; WKB calculations; current density; dielectric thin films; permittivity; semiconductor device models; MOSFETs; WKB method; barrier height; dielectric constant; drain edge; electron temperature; high dielectric constant material; high-K gate stacks; injection current; suppress gate current densities; Current density; Dielectric constant; Electrons; High K dielectric materials; High-K gate dielectrics; MOSFETs; Probability; Silicon; Temperature; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on
Print_ISBN :
4-89114-027-5
DOI :
10.1109/SISPAD.2002.1034563
