Title :
MEMS-based piezoelectric micro cantilever using LaNiO3 buffered PZT thin film
Author :
Kobayashi, Takeshi ; Kondo, Ryuichi ; Nakamura, Kentaro ; Ichiki, Masaaki ; Maeda, Ryutaro
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
We have fabricated piezoelectric micro cantilevers using LaNiO3 (LNO) buffered PZT thin film through microelectromechanical systems (MEMS) micro fabrication process. The micro cantilevers have been fabricated from Pt/Ti/LNO/PZT/LNO/Pt/Ti/SiO2 or Pt/Ti/PZT/Pt/Ti/SiO2 multilayers deposited on SOI wafers. The PZT thin films without LNO thin films were degraded through the MEMS micro fabrication process. We have found that the LNO thin films can avoid the degradation. DC actuation of the micro cantilevers using LNO buffered PZT thin films has resulted in symmetric butterfly curve. The transverse piezoelectric constant of LNO buffered PZT thin films (-d31 = 120 pm/V) is higher than that of the PZT thin films without LNO thin films (70 pm/V).
Keywords :
lanthanum compounds; lead compounds; micromechanical devices; multilayers; piezoelectric thin films; silicon-on-insulator; zirconium compounds; DC actuation; LaNiO3-PZT; MEMS-based piezoelectric micro cantilever; SOI wafers; SiJk; buffered PZT thin film; microelectromechanical systems micro fabrication process; multilayers; transverse piezoelectric constant; Conductive films; Degradation; Electrodes; Fabrication; Microelectromechanical devices; Micromechanical devices; Nonhomogeneous media; Piezoelectric films; Sputtering; Thin film devices;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393381
