DocumentCode :
2278862
Title :
SISPAD ´97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest [Front Matter and Table of Contents]
fYear :
1997
fDate :
8-10 Sept. 1997
Abstract :
Presents front cover and table of contents from the conference proceedings.
Keywords :
MIS devices; Monte Carlo methods; diffusion; numerical analysis; semiconductor device metallisation; semiconductor device models; semiconductor process modelling; simulation; MEMS analysis; MOS device design; Monte Carlo simulation; device simulation; dose loss; interconnect analysis; nonstandard devices; numerical techniques; physical models; process calibration; process modelling; process simulation; quantum effects; thin films; transient enhanced diffusion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
Type :
conf
DOI :
10.1109/SISPAD.1997.621319
Filename :
621319
Link To Document :
بازگشت