Title :
Historical perspective and recent developments of hot-carrier generation modeling for device analysis
Author_Institution :
DIEGM, Udine Univ., Italy
Abstract :
The paper presents an historical perspective of the efforts devoted in the past years to achieve efficient but increasingly accurate modeling of hot carrier generation in MOS devices. In addition, new modeling problems raised by recent experiments, and related to the effects of power supply and geometry down-scaling will be discussed.
Keywords :
MOSFET; hot carriers; semiconductor device models; MOS device; geometry down-scaling; hot carrier generation model; power supply; Electrons; Geometry; Hot carriers; Kinetic energy; MOS devices; MOSFET circuits; Nonvolatile memory; Power supplies; Solid modeling; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621323
