Quantum transport modeling in nano-scale devices

Author

Ogawa, Matsuto ; Tsuchiya, Hideaki ; Miyoshi, Tanroh

Author_Institution

Dept. of Electr. & Electron. Eng., Kobe Univ., Japan

fYear

2002

fDate

2002

Firstpage

261

Lastpage

266

Abstract

We present results and describe progress we have made in the development of our quantum transport modeling for nanoscale devices. Our simulation is based upon either the nonequilibrium Green´s function method (NEGF) or the quantum correction (QC) associated with the density gradient method (DG) and/or the effective potential method (EP). We show the results of our modeling methods applied to several devices and discuss issues faced with regards to computational time, open boundary conditions, and their relationship to self-consistent solution of the Poisson-NEGF equations. We also discuss those for efficiently tailored QC Monte Carlo techniques.

Keywords

Green´s function methods; MIS devices; MOSFET; Monte Carlo methods; Poisson equation; SCF calculations; digital simulation; electronic engineering computing; nanoelectronics; resonant tunnelling diodes; semiconductor device models; tight-binding calculations; MOS diode; Monte Carlo techniques; Poisson-NEGF equations; RTD; computational time; density gradient method; double-gated MOSFET; effective potential method; efficient semiclassical approach; empirical sp3s* nearest neighbor tight-binding model; evanescent-wave-mode-matching method; gate leakage current; integrated circuits; nanoscale devices; nonequilibrium Green´s function method; nonparabolicity effects; open boundary conditions; predictive simulation tools; quantum correction; quantum effects; quantum transport modeling; resonant tunneling diode; self-consistent solution; semiconductor device; valley mixing effects; Analytical models; Atomic layer deposition; Diodes; Electrons; Green´s function methods; Integrated circuit modeling; MOSFETs; Nanoscale devices; Quantum mechanics; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on

Print_ISBN

4-89114-027-5

Type

conf

DOI

10.1109/SISPAD.2002.1034568

Filename

1034568