Shockwave generation by a Semiconductor Bridge operation in water

Summary form only given. Semiconductor Bridge (SCB) is a silicon device, used in explosive systems as the electrical initiator element. In recent years SCB plasma have been extensively studied, both electrically¹ and optically, using fast photography² and spectroscopic imaging³. These studies were carried out in majority of experiments either in air at atmospheric pressure or in a sealed bridge with explosive material pressed onto it. However, the question of the pressure buildup at the bridge remains unanswered. In this work we have operated SCB devices in water. Using shadow imaging and reference interferometry, the velocity of the shock wave propagation and distribution of the density of water were obtained. These results together with a self-similar water flow model were used to calculate the pressure of generated by the exploding SCB. In addition, the results obtained showed that the energy of the water flow exceeds significantly the energy deposited into the exploded SCB. The latter can be explained by combustion of aluminum and silicon atoms released in water, which acts as an oxidizing media.