Title :
Power semiconductor device models for use in circuit simulators
Author :
Lauritzen, Peter O.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The publicly available power semiconductor device models are surveyed, their performances are compared, and recommendations for specific simulation applications are presented. It is shown that the accurate models available for the power BJT and MOSFET often cannot run on the same simulators, power transistor models are more completely developed than thyristor models, and no suitable power rectifier model exists that can produce accurate switching waveforms.<>
Keywords :
bipolar transistors; insulated gate field effect transistors; power transistors; semiconductor device models; bipolar junction transistor; circuit simulators; power rectifier model; power semiconductor device models; power transistor models; power transistors; switching waveforms; thyristor models; Circuit simulation; Design automation; Integrated circuit modeling; Mathematical model; Power electronics; Power semiconductor devices; Power system modeling; SPICE; Semiconductor device modeling; Switches;
Conference_Titel :
Industry Applications Society Annual Meeting, 1990., Conference Record of the 1990 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-87942-553-9
DOI :
10.1109/IAS.1990.152393
